Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films have been deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. Au top electrodes were formed by sputtering to fabricate capacitors with Au/BNT/Pt structure. The prepared capacitors were then subjected to 10 Mrad(Si) electron radiation. Loss in the remanent polarization and reduction in the leakage current were observed after radiation. Possible mechanisms concerning the radiation-induced changes were discussed. The polarization loss was attributed to the screening effects of trapped charge carriers, while the observed leakage currents showed a grain boundary limited conduction behavior.
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Li et al. (2009) studied this question.
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