Contact Engineering of MoS 2 Synaptic Transistors via Reactive Ion Etching

Key Points

• This research aims to optimize the performance of artificial synaptic devices using MoS2 via contact engineering.
• Employed reactive ion etching to modify contacts in MoS2 transistors.
• Analyzed device performance post-etching using various electrical measurements.
• Evaluated the influence of etching parameters on device behavior.
• Improved synaptic response demonstrated by increased current modulation of ~30%.
• Reduced energy consumption by ~15% in the optimized devices.
• Enhanced retention time observed, increasing from 1 second to over 10 seconds.