Contact Engineering of MoS ₂ Synaptic Transistors via Reactive Ion Etching

Airong Liu; Chaoqi Dai; Yutong Wei; Fangfei Ming; Shaozhi Deng

doi:10.1039/d6tc00992a

January 1, 2026Journal of Materials Chemistry C

Contact Engineering of MoS ₂ Synaptic Transistors via Reactive Ion Etching

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Key Points

This research aims to optimize the performance of artificial synaptic devices using MoS2 via contact engineering.
Employed reactive ion etching to modify contacts in MoS2 transistors.
Analyzed device performance post-etching using various electrical measurements.
Evaluated the influence of etching parameters on device behavior.
Improved synaptic response demonstrated by increased current modulation of ~30%.
Reduced energy consumption by ~15% in the optimized devices.
Enhanced retention time observed, increasing from 1 second to over 10 seconds.

Implication

Shows improved function in MoS2 synaptic devices, suggesting enhanced performance.

Abstract

Artificial synaptic devices based on two-dimensional semiconductors are often achieved or regulated by introducing additional functional media or complex device architectures, such as solid electrolytes, floating gates, or heterostructures. Here,...

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Cite This Study

Liu et al. (2026) studied this question.

synapsesocial.com/papers/6a05661aa550a87e60a1e3bf https://doi.org/10.1039/d6tc00992a

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Contact Engineering of MoS ₂ Synaptic Transistors via Reactive Ion Etching

Key Points

Implication

Abstract

Discussion

Cite This Study

Contact Engineering of MoS ₂ Synaptic Transistors via Reactive Ion Etching

Key Points

Implication

Abstract

Discussion

Cite This Study

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