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May 14, 2026Journal of Materials Chemistry C1 citationsOpen Access

Metal-driven interface engineering enables multi-functionality in SrTiO 3 memristor devices

SSSeyed Mehdi Sattari-EsfahlanTU WienMMMarko MladenovićETH ZurichMLMathieu LuisierETH Zurich

Key Points

  • This research investigates how metal-driven interface engineering in SrTiO3 affects device functionalities.
  • Examined metal-dependent interface engineering strategies.
  • Controlled interfacial oxide formation and oxygen vacancy distribution in memristor devices.
  • Evaluated performance metrics for resistive switching and unipolar NDR.
  • Enhanced resistive switching was observed, indicating more reliable data storage capabilities.
  • Unipolar NDR performance improved, allowing for better signal modulation.
  • Both enhancements were reproducible across multiple tests.

Abstract

Metal-dependent interface engineering in SrTiO 3 controls interfacial oxide formation and oxygen vacancy distribution. This enables reproducible enhancement of both resistive switching and unipolar NDR performance.

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Cite This Study

Sattari-Esfahlan et al. (2026) studied this question.

synapsesocial.com/papers/6a05680ea550a87e60a2064bhttps://doi.org/10.1039/d6tc00552g
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