Metal-driven interface engineering enables multi-functionality in SrTiO ₃ memristor devices

Seyed Mehdi Sattari-Esfahlan; Marko Mladenović; Mathieu Luisier; Venkata R. Nallagatla; Hyoung-Gyun Kim

doi:10.1039/d6tc00552g

January 1, 2026Journal of Materials Chemistry COpen Access

Metal-driven interface engineering enables multi-functionality in SrTiO ₃ memristor devices

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Key Points

This research investigates how metal-driven interface engineering in SrTiO3 affects device functionalities.
Examined metal-dependent interface engineering strategies.
Controlled interfacial oxide formation and oxygen vacancy distribution in memristor devices.
Evaluated performance metrics for resistive switching and unipolar NDR.
Enhanced resistive switching was observed, indicating more reliable data storage capabilities.
Unipolar NDR performance improved, allowing for better signal modulation.
Both enhancements were reproducible across multiple tests.

Implication

Reveals improved resistive switching and NDR performance in SrTiO3 devices, suggesting innovative interface strategies.

Abstract

Metal-dependent interface engineering in SrTiO 3 controls interfacial oxide formation and oxygen vacancy distribution. This enables reproducible enhancement of both resistive switching and unipolar NDR performance.

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Cite This Study

Sattari-Esfahlan et al. (2026) studied this question.

synapsesocial.com/papers/6a05680ea550a87e60a2064b https://doi.org/10.1039/d6tc00552g

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Metal-driven interface engineering enables multi-functionality in SrTiO ₃ memristor devices

Key Points

Implication

Abstract

Discussion

Cite This Study

Metal-driven interface engineering enables multi-functionality in SrTiO ₃ memristor devices

Key Points

Implication

Abstract

Discussion

Cite This Study

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