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May 14, 2026Nanoscale0 citations

Point Defect-Driven Switching of Conductivity Type in Bi2Te3 Films prepared by Atomic Layer Deposition

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TGTao GuoSLShuo LiXLXu Li

Key Points

  • This research aims to explore how point defects influence the conductivity type in bismuth telluride films.
  • Films prepared using atomic layer deposition (ALD)
  • Investigation of point defect influence on conductivity
  • Application of the findings in thermoelectric devices
  • Altering point defects in bismuth telluride films switched conductivity from n-type to p-type.
  • Demonstrated significant improvement in the thermoelectric properties depending on defect concentration.

Abstract

Bismuth telluride (Bi2Te3) films have significant application prospects in future thin-film thermoelectric devices. Atomic layer deposition (ALD) offers significant advantages for the fabrication of high-performance nanoscale films due to its...

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Cite This Study

Guo et al. (2026) studied this question.

synapsesocial.com/papers/6a05684ea550a87e60a20c86https://doi.org/10.1039/d6nr00533k
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