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December 2, 2019ACS Applied Materials & Interfaces214 citations

Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing

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XYXiaobing YanCQCuiya QinCLChao Lü

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Abstract

film because two layers have different ion transport rates, thereby limiting the rupture/rejuvenation of CFs to the bilayer interface region, which can greatly reduce the randomness of CFs in MDs. Moreover, we used the handwritten recognition dataset (i.e., the Modified National Institute of Standards and Technology (MNIST) database) for neuromorphic simulations. Furthermore, biosynaptic functions and plasticity, including spike-timing-dependent plasticity and paired-pulse facilitation, have been successfully achieved. By incorporating 2D materials and oxides into a double-layer MD, the practical application of RRAM MD can be significantly enhanced to facilitate the development of artificial synapses for brain-enhanced computing systems in the future.

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Cite This Study

Yan et al. (2019) studied this question.

synapsesocial.com/papers/6a06a75e5589773960841046https://doi.org/10.1021/acsami.9b17160
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