The impacts of charge trapping and filament-induced anisotropy on the resistive switching mechanism in hafnia are formulated and quantified. Using ab initio calculations, we find the energetics and kinetics of oxygen vacancies in hafnium oxide resistive random access memory are strongly influenced by charge trapping at vacancy sites as well as the local crystal structure and presence of nearby conductive filaments.
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Duncan et al. (2016) studied this question.
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