Low power operating bipolar TMO ReRAM for sub 10 nm era

The bottle neck of ReRAM (Resistive RAM) for post-NAND storage application is high operational current. Herein, we report a method to acquire low operational currents from a hetero structure ReRAM (AlOx/TiOx). The mechanism study of the hetero structure ReRAM reveals that the AlOx layer as a tunnel barrier is critical for switching, and thus switching parameters are governed by the properties of the AlOx layer. By tuning tunnel oxide properties along with adopting 5 nm sized “Dash BE”, operational currents of ≤10 μA have been achieved from this hetero structure device.