Crystallization behavior and ferroelectric property of HfO ₂ –ZrO ₂ films fabricated by chemical solution deposition

In this study, we investigate the crystallization behavior of the precursor HfO 2 –ZrO 2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf 0.5 Zr 0.5 O 2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P – E hysteresis loop with a remanent polarization ( P r ) of 8 µC/cm 2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P – E curve with a lower P r value was confirmed for the film crystallized at 600 °C.