Exceptionally low-voltage operation of organic ferroelectric capacitors and diodes was demonstrated. Ferroelectric polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films were prepared by the solvent-cast method. Metal-ferroelectric-metal capacitors with 60-nm-thick P(VDF-TrFE) films exhibited well-saturated hysteresis curves whose coercive voltage (Vc) and remanent polarization (Pr) were 2.0V and 11.9μC∕cm2, respectively. The authors also fabricated metal-ferroelectric-insulator-semiconductor diodes with 100-nm-thick P(VDF-TrFE) films. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops were obtained with a voltage sweep range narrower than 5V. The maximum memory window of 4.7V was achieved.
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Fujisaki et al. (2007) studied this question.
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