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We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.
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Cheng et al. (2011) studied this question.
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