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Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.
Cheng et al. (Mon,) studied this question.