We have fabricated epitaxial Pr0.7Ca0.3MnO3∕SrTi0.9998Nb0.0002O3 (PCMO∕Nb:STO) junctions and characterized the interface electronic properties. The PCMO∕Nb:STO junctions show highly rectifying current density–voltage (J–V) characteristics without an apparent breakdown in the reverse bias up to 100V at room temperature. The J–V characteristics of the diodes agree well with the conventional diffusion theory for a p-n diode. The forward bias J–V and reverse bias capacitance-voltage characteristics result in an identical built-in potential of ∼0.7eV. Based on the experimental results, a plausible band diagram of the PCMO∕Nb:STO p-n diode is proposed.
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Sawa et al. (2005) studied this question.
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