This letter investigates the unipolar resistive switching behaviors of sputtered ZnO thin films by changing the electrode combinations of Pt and Ru, creating four sandwich structures of Pt/ZnO/Pt, Pt/ZnO/Ru, Ru/ZnO/Pt, and Ru/ZnO/Ru. Only the Pt/ZnO/Ru devices in this letter achieved favorable resistive switching characteristics, including good endurance performance, narrow distributions in switching parameters, high on/off ratio (>; 150), and clear difference between the set and reset voltages (~1 V). This may be attributed to the low oxygen affinity of Pt electrodes and the strong c-axis texture of ZnO thin films grown on Ru electrodes.
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Liu et al. (2011) studied this question.
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