Shows nonvolatile resistive switching in nanowire memory, indicating potential for advanced devices.
Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10 5 . The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.
No takes yet. Share an insight, caveat, or question.
Chiang et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: