Demonstrates effective modulation of carrier lifetimes in TMD heterostructures, suggesting advancements for future optoelectronic devices.
″, and E' symmetry that more efficiently modulate the band edges. These results establish sliding-ferroelectric proximity engineering as an effective strategy for programming interfacial charge dynamics in 2D heterostructures and provide microscopic design rules for reconfigurable ferroelectric semiconductor platforms for future optoelectronic and information devices.
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Yang et al. (2026) studied this question.
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