of 0.960 V. Moreover, the becoming stacking characteristics of AQ-NI facilitate the modulation of aggregation behavior in the active layer, resulting in a favorable phase-separated morphology and enhanced charge carrier transport. As a result, the layer-by-layer (LBL)-fabricated binary OSCs based on D18/AQ-NI achieved a high PCE of 19.14%. In addition, AQ-NI could serve as a guest molecule in a bulk-heterojunction structure, and D18:L8-BO:AQ-NI-based ternary OSCs realized an improved PCE of 20.22% in comparison with the D18:L8-BO-based binary device (PCE = 19.39%). Our findings provide a simple and promising strategy for designing high-performance NFAs with AIE effect and establish a fundamental correlation between AIE properties and OSC performance.
Ge et al. (2026) studied this question.