The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 1016 cm−3 in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.
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Volpe et al. (2010) studied this question.
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