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Numerical calculations assess how fixed charges and trapped electrons affect electron mobility in MOSFETs, indicating significant implications for device performance.
The impact of Coulomb scattering by fixed charges and trapped electrons on the free electron mobility ( μ free ) of SiC(11 2 ¯ 0) and (1 1 ¯ 00) MOSFETs annealed in NO was quantitatively discussed through numerical calculations. The fixed charge density for MOSFETs on (11 2 ¯ 0) and (1 1 ¯ 00) annealed in NO was estimated to be 1.0 × 10 13 cm −2 , which is four times higher than that for (0001) MOSFETs previously reported. Calculation of μ free can well reproduce the experimental Hall mobilities for all MOSFETs on (11 2 ¯ 0) and (1 1 ¯ 00) within the wide range of effective normal field (0.08 MV cm −1 ≤ E eff ≤ 0.78 MV cm −1 ).
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Itō et al. (2024) studied this question.
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