Numerical Simulation and Experimental Study on Picosecond Laser Polishing of 4H-SiC Wafer

4H-SiC wafers usually require polishing treatment after slicing to improve the surface quality. However, traditional polishing processes have problems such as low removal efficiency and easy surface damage, which affect the reliability of electronic devices. In this paper, picosecond laser polishing technology is used to study the 4H-SiC wafers after slicing. Numerical models of single-pulse ablation and moving heat source polishing were established to reveal the interaction mechanism between laser and material, including the dynamic evolution of free electron density and the remarkable spatiotemporal non-equilibrium heat transfer characteristics of the electron-lattice system. The sliced 4H-SiC surface with a roughness of 2265 nm was polished by a 1064 nm picosecond laser, and the influence of laser power and scanning speed on the surface quality was systematically studied. By collaboratively optimizing the polishing power and speed, the surface roughness of the sample can be significantly reduced to 207.33 nm (a decrease of 90.85%). The research results indicate that an ultrafast laser is suitable for the pretreatment process of sliced silicon carbide wafers, laying a foundation for further research in the future. This research has a certain research significance for promoting the development of ultrafast laser polishing technology for single crystal silicon carbide wafers and improving the performance and reliability of semiconductor devices.