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beneath the Pb layer. We introduce an approach to interpret the experimental data based on the identification of local SOI-derived band gaps-SOI hotspots-where the intrinsic SOI contribution, arising from the SOI field transfer from the overlayer to the host, is isolated from competing effects such as scalar (non-SOI) hybridization, interlayer interactions and Rashba-type splitting. We find that the proximity to Pb strongly enhances the intrinsic SOI as manifested by k-dependent increase of the band splitting in the SOI hotspots by up to several tens of meV. Tunability of this effect via Pb coverage provides versatile means for tailoring SOI to specific spintronic and quantum applications.
Alarab et al. (Wed,) studied this question.