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Pb (Zr x, Ti 1 − x) O 3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt (111) ∕TiOx∕SiO2∕Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form ±12to±2. 5at. %. The 2μm thick, dense and crack-free films exhibited a 100-texture index of 98. 4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant ε33, f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31, f was measured as −17. 7Cm2.
Calame et al. (Mon,) studied this question.
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