The Pt/TiO₂/HfO2−x/TiN resistive switching memory structure showed self-rectifying resistive switching behavior with unprecedented unique I–V curves named “self-current saturation”, which can give an extremely uniform variation of the low resistance state.
No takes yet. Share an insight, caveat, or question.
Yoon et al. (2017) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: