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March 1, 1992Journal of Applied Physics

Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

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Authors

JSJ. H. SmetMax Planck Institute for Solid State ResearchTBT.P.E. BroekaertAptiv (United States)CFClifton G. FonstadMassachusetts Institute of Technology

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Smet et al. (1992) studied this question.

synapsesocial.com/papers/6a08c96547731828a601e596https://doi.org/10.1063/1.351085
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs1983 · 104 citations
  2. 2Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures1988 · 94 citations
  3. 3A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature1987 · 108 citations
  4. 4Physics of resonant tunneling. The one-dimensional double-barrier case1984 · 731 citations
  5. 5Lattice matched and pseudomorphic In0.53Ga0.47As/InxAl1−x As resonant tunneling diodes with high current peak-to-valley ratio for millimeter-wave power generation1990 · 10 citations