March 1, 1992

Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

JSJ. H. SmetMax Planck Institute for Solid State Research TBT.P.E. BroekaertAptiv (United States)CFClifton G. FonstadMassachusetts Institute of Technology

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Abstract

Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with the highest peak-to-valley current ratios reported to date have been fabricated on InP substrates with molecular beam epitaxy. Peak-to-valley current ratios as high as 50:1 at 300 K are obtained. The majority of the devices on the sample have a peak-to-valley current ratio of 42 at 300 K and 85 at 77 K.

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Smet et al. (Sun,) studied this question.

synapsesocial.com/papers/6a08c96547731828a601e596 https://doi.org/https://doi.org/10.1063/1.351085

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