The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Delta of 0.1 meV.
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Calvet et al. (2007) studied this question.
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