High peak current density Ga0.47In0.53As interband tunnel diodes were fabricated by metal organic molecular beam epitaxy. A room temperature peak-to-valley current ratio of 16 and a peak tunnel current density of 9.2 kA/cm2 were obtained in diodes doped to ~3 × 1019 cm3 on both n-type and p-type sides. A peak-to-valley current ratio of 3.8, and a peak tunnel current density of 93.2 kA/cm2 were obtained in diodes doped to ~1020 cm-3 on both n-type and p-type sides.
No takes yet. Share an insight, caveat, or question.
Cohen et al. (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: