The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. Using migration-enhanced epitaxial techniques, we grew InAs/AlSb superlattices with both types of interfaces. The control of interfacial composition was confirmed by x-ray diffraction and Raman spectroscopy measurements. We demonstrate that superlattices displaying multiple x-ray diffraction satellites, distinct planar vibrational modes, and strong photoluminescence can be achieved with both InSb- and AlAs-bonded interfaces using appropriate buffer layers and growth temperatures.
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Bennett et al. (1994) studied this question.
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