Demonstrates improved efficiency in memristors using quantum dots, suggesting new pathways for neuromorphic systems.
layer, passivating interfacial defects and promoting structural reorganization at the interface. The optimized device exhibits highly uniform switching and a considerable reduction in SET power consumption from 37.57 to 2.52 μW. Object-detection simulations demonstrate that while the control device suffers an accuracy loss of 17.9%, the QD-incorporated device maintains robust performance with only a 2.8% loss in accuracy over 2,000 cycles. These results establish QD-driven defect engineering as a robust pathway for developing reliable components for future neuromorphic systems.
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Yoon et al. (2026) studied this question.
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