An InP/InAlAs double-barrier resonant tunneling diode (DB-RTD) is grown by gas source molecular beam epitaxy for the first time. It shows clear negative differential resistance (NDR) at 77 K, and the NDR peak current density agrees well with the value calculated using the conduction band offset (0.35 eV), which is determined from the intersubband absorption measurement. A pseudomorphic InP/AlAs DB-RTD is also fabricated, which shows clear NDR at room temperature.
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Kawamura et al. (1992) studied this question.
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