A coherent transport model is described which accommodates bandstructure nonparabolicity by using a ‘‘local energy parabolic band approximation.’’ The model and a knowledge of its limitations is used to design resonant tunneling diodes in the GaAs/AlAs material system with measured peak current densities of 2.5(2.8)×105 A cm−2 concurrent with peak-to-valley ratios as high as 1.8 (3.1) at room temperature (77 K).
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Wolak et al. (1991) studied this question.
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