The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×10 2 Acm -2 to 1.2×10 4 Acm -2 by the choice of L B , in accordance with the theoretical calculations. Furthermore, I – V characteristics of these devices are shown to be excellent with peak-to-valley ratios of 2.3 at room temperature and 10 at 80 K, the highest values ever reported.
No takes yet. Share an insight, caveat, or question.
Tsuchiya et al. (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: