We investigate the effects of impurity scattering on resonant transmission coefficients in GaAs/AlAs double-barrier structures. The coefficients are estimated from d 2 I /d V 2 - V characteristics of resonant tunneling diodes, using a recently introduced method. To our knowledge, this is the first time that resonance level broadening due to ionized impurity scattering has been shown experimentally.
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Fukuyama et al. (1992) studied this question.
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