Answers are grounded in this paper and cite their sources.
A high-speed diode element consisting of a metal-metal-oxide-metal electron-tunneling junction is formed by thin films deposited on a substrate. These junctions are integrated with deposited narrow resonant antenna structures which couple the junction to incident radiation. Broad-band characteristics from radio and microwave frequencies to the infrared region are shown. Frequency mixing and the possibility of utilizing large numbers of elements simultaneously are also demonstrated.
No takes yet. Share an insight, caveat, or question.
Small et al. (1974) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: