Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN

We demonstrate the growth of pure wurtzite phase ScxAl1−xN with a Sc composition as high as x = 0.34 on GaN and AlN templates using plasma-assisted molecular beam epitaxy. The wurtzite structure is well maintained even at high growth temperatures up to 900 °C for Sc0.2Al0.8N. Smooth surface morphology (root mean square roughness less than 1 nm) and excellent crystal quality [(002) plane rocking curve full-width at half maximum below 450 arc sec] are achieved over the range of x ≤ 0.34. Optical absorption studies indicate a decreasing bandgap with increasing Sc with a linear relationship of Eg(x) = 6.1 − 3.39x, which is in good agreement with the theoretical prediction. A monotonically tunable refractive index between AlN and GaN is further measured for ScxAl1−xN with various Sc compositions. This work provides a viable path for the epitaxy of wurtzite ScxAl1−xN with high Sc compositions. The distinct effect of substitutional Sc on bandgap and refractive index could be used in designing high-performance optoelectronic, electronic, and piezoelectric devices, and III-nitride integrated photonics and optical cavities.