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Calculations are presented which indicate that the maximum theoretical solar conversion efficiency of Schottky-barrier solar cells is very similar to that of conventional homojunction solar cells, e.g. values of 22–24% apply to Si, and ∼ 25% to semiconductors having a band gap between 1.4 and 1.6 eV.
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Pulfrey et al. (1974) studied this question.
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