A remarkable performance enhancement of Gr/Si junction-based self-powered photodetectors is demonstrated via surface modification with a MoO3 thin film. The external quantum efficiency of the Gr/Si device is significantly enhanced up to ≈80% by almost four times in the visible light region, which can be attributed to the increased Schottky barrier height and the reduced series resistance of Gr/Si device after MoO3 modification.
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Xiang et al. (2015) studied this question.
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