Comparison of mobility and hole current activation energy in the space charge trap-limited regime in a starburst amine

Using two complementary methods, we have investigated the individual contribution of the space charge-limited hole transport in vapor-deposited films of 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (m-MTDATA) to the temperature behavior of organic light-emitting diodes. In single-layer indium tin oxide/m-MTDATA/Ag structures, we have measured the activation energies of the current density and of the hole mobility as a function of the applied electric field. Both activation energies obtained under steady-state and pulsed conditions are comparable, which confirms that the temperature behavior of the current density is predominantly governed by the hole mobility.