Wideband Near-Infrared Hot-Electron Photodetector Based on Metal Grating Structure

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The generation of hot electrons through non-radiative decay processes of surface plasmons (SPs) has been extensively demonstrated, enabling the preparation of high-performance hot-electron photodetectors without limitations imposed by material band gap widths. In this paper, a near-infrared wideband hot-electron metal semiconductor photodetector (WHEMSPD) is proposed based on a metal grating plasmonic structure, and its optical and electrical properties are numerically verified. This structure exhibits excellent broadband characteristics within the long-wave near-infrared range (LW-NIR) of 1200–1800 nm, achieving an absorption of approximately 0.7 between 1200 and 1700 nm, with a peak of 0.98 at 1400 nm. The metal grating structure can effectively enhance the excitation of plasmons on the surface and thus increase the absorption within a larger bandwidth. In terms of electrical performance, the responsivity of the WHEMSPD reaches over 20 mA/W within the wavelength range of 1200–1500 nm, with the peak responsivity reaching 28.3 mA/W around 1320 nm. WHEMSPDs in the LW-NIR can be widely used in military, remote sensing, communication, and other related fields.