Linear photon upconversion of 400meV in an AlGaInP∕GaInP quantum well heterostructure to visible light at room temperature

We linearly up convert photons from 820to650nm, an energy change of ∼400meV, using a AlGaInP∕GaInP quantum well heterostructure. Current and luminescence-voltage measurements are presented at temperatures from 6to300K. Photoexcited electrons are injected into the semiconductor from the Au Schottky and a forward bias across the p+-i-n heterostructure drifts electrons into the GaInP quantum well. Holes diffuse from the heavily doped substrate and radiatively recombine, emitting ∼650nm light. Linear upconversion is verified by injecting hot electrons with a solid-state tunnel junction. This device encourages other technologies, including night-vision aids and thermal energy converters.