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We describe the design, fabrication, and operation of a GaAs-based heterostructure device which emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias exceeding a threshold determined by the Schottky barrier height and sample band gap energy must be applied for luminescence emission. The consequences of these results for a hybrid scanning-probe microscopy and spectroscopy combining both ballistic electron emission microscopy and scanning tunneling luminescence are emphasized.
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Appelbaum et al. (2003) studied this question.
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