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This paper proposes a new improved method to describe the power losses in hard-switched IGBT-inverters. The method includes dependency of voltage, current and temperature which enables the user to simulate thermal effects very quickly. The model is used on both a PT and NPT IGBT-module including the free-wheeling diode. Methods to extract the perimeters to the models are proposed and they are verified by measurements and simulation. It is concluded that the proposed model can describe the losses in IGBT-inverters accurately and a tool for simulating thermal effects is obtained.
Blaabjerg et al. (Mon,) studied this question.