In this work we present a novel simulation environment for analysis of electro-thermal interaction in power semiconductor devices. The developed solution is based on the joint use of ELDO-COMSOL simulators in an iterative scheme between an electrical 2D SPICE network and 3D FEM thermal solver. The power device is described with a multi-cellular approach using proper temperature dependent SPICE library and macro-cell concept. The thermal problem is solved on a 3D domain considering the full chip structure, including package and bond-wires. In order to validate the proposed approach, simulations during short-circuit tests have been performed considering a commercial STripFET II Power-MOSFET. Finally the simulation results have been compared with transient InfraRed (IR) thermal measurements proving the effectiveness of the new simulator.
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Falco et al. (2014) studied this question.
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