A physically based compact device model of the PIN diode is presented. A new 1D module for the drift zone (low doped n-base region) is presented which correctly describes static and dynamic behavior of the power diode. This incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, this electric model is transformed into a electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node stores information about junction temperature of the active device and it represents a connection between the device and the rest of the circuit thermal network.
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Mawby et al. (2002) studied this question.
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