A relationship is derived for the temperature rise at the mirror facet of semiconductor lasers. The analytical result is based on the model of C.H. Henry et al. (1979) as applied to CW lasers and a thermal model. The effects of active layer length and its thickness, surface recombination velocity, output intensity, and an effective thermal length are delineated for the temperature rise. A comparison with experimental results reported in the literature shows good agreement for the facet temperature rise. A by-product is an approximate relationship for the temperature distribution along the lasing direction.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Yoo et al. (1992) studied this question.
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