Differential gain and carrier lifetime have been deduced experimentally for InGaN MQWs having different magnitudes of In compositional fluctuation and defect density in the active layer. It has been found that the compositional fluctuation and differential gain show a strong correlation in full accordance with the theoretical model for a band-tail modified by In compositional fluctuation as described in the companion paper (part I). Several laser characteristics, threshold current density, differential gain and response time, were found to be affected by the compositional fluctuation and defect density. The optimization of these growth parameters for producing high-performance blue-violet InGaN MQW LDs is also discussed.
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Kuramoto et al. (2001) studied this question.
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