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ZnSe p-n junction diodes have been formed by nitrogen ion implantation. MIS diodes have also been made using a film of ZnSe oxidized in H2O2 solution for the insulator layer. Blue electroluminescence has been observed from both the diodes in forward bias at room temperature. The external quantum efficiency is about 10−5. The emission may originate from a bound exciton.
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Yamaguchi et al. (1977) studied this question.
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