Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to donor-acceptor pair transitions, impurities, and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped conduction band electrons and valence band holes. These trapped charges are metastable and their re-excitation with low-energy photons results in anti-Stokes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-type exciton in hBN with a large binding energy.
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Museur et al. (2008) studied this question.
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