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February 15, 1987Journal of Applied Physics

Impurity induced layer disordering of Si implanted AlxGa1−xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

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Authors

LGL. J. GuidoVirginia TechKHK. C. HsiehNational Tsing Hua UniversityNHN. HolonyakGeneral Electric (United States)

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Guido et al. (1987) studied this question.

synapsesocial.com/papers/6a0e6842ee79da3955042ecchttps://doi.org/10.1063/1.338111
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