SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxP

The spontaneous and laser spectral behavior of high-quality In1−x Gax P grown slowly from an In solution in a small temperature gradient is described. The band-to-band carrier decay times are measured below (2.3 nsec, 77°K) and above (0.85 nsec) laser threshold by an optical phase shift technique and indicate low bulk and surface losses (s≤104 cm/sec). Continuous laser operation of a thin In1−x Gax P sample is demonstrated at a photoexcitation level of ∼103 W/cm2 (hνpump =1.96 eV).