Experimental study demonstrates continuous-wave laser operation and low carrier decay times in indium gallium phosphide, indicating minimal bulk and surface losses.
The spontaneous and laser spectral behavior of high-quality In1−x Gax P grown slowly from an In solution in a small temperature gradient is described. The band-to-band carrier decay times are measured below (2.3 nsec, 77°K) and above (0.85 nsec) laser threshold by an optical phase shift technique and indicate low bulk and surface losses (s≤104 cm/sec). Continuous laser operation of a thin In1−x Gax P sample is demonstrated at a photoexcitation level of ∼103 W/cm2 (hνpump =1.96 eV).
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Burnham et al. (1971) studied this question.
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