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Mixing Si and Ge: An important step towards the formation of Si–Ge mixed semiconducting materials has been taken. The ternary Zintl phases A4Si2Ge2 and Rb12Si12Ge5 contain a heteroatomic [Si4−xGex]4− Zintl cluster. The mixed clusters have been isolated from solution in form of the salt [Rb([18]−crown–6)]2Rb2[(MesCu)2(Si3.3(1)Ge0.7(1))](NH3)12 (see figure).
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Waibel et al. (2011) studied this question.
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