Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

This is the authors' abstract. We don't add key points for this paper.

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 oC-300 hrs. The 10 years-220 oC data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.